|When:||Thursday, November 29, 2012|
11:15 AM - 12:15 PM
|Where:||Technological Institute, M152
2145 Sheridan Road
Evanston, IL 60208 map it
|Audience:||- Faculty/Staff - Student - Public|
(847) 491-3537 |
|Group:||Department of Materials Science and Engineering|
|Category:||Lectures & Meetings|
Please join us in welcoming Lain-Jong Li, Associate Research Fellow at the Research Center for Applied Science, Academia Sinica, Taiwan.
Thursday, November 29, 2012
Tech M152 (near Tech Express), 11:15am.
"Synthesis and applications of two-dimensional MoS2 layers".
The transistors fabricated with the molybdenum disulfide (MoS2) atomic thin layers exhibit excellent on/off current ratio and high carrier mobility, which make them suitable for next generation transistors. Their direct-gap property suitable for optoelectronics and energy harvesting are also attractive. However, the synthetic approach to obtain high quality and large-area MoS2 atomic thin layers is still challenging. Here we report that the high temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 few layers with superior electrical performance on insulating substrates. Bendable and stretchable electronics can be achieved using these layers. This synthetic approach is simple, scalable and applicable to other transition metal dichalcogenides. We will also discuss our recent approach to obtain MoS2 monolayer directly on SiO2/Si substrates using MoO3 and S powders as the reactants. These high quality single crystalline MoS2 layers are promising for electronics and optoelectronics. The applications for photodetector and electrocatalytic hydrogen generation will be discussed.