Northwestern Events Calendar

Jun
30
2016

“Spintronics Nano-Devices for VLSIs”

Hideo Ohno

When: Thursday, June 30, 2016
4:00 PM - 5:00 PM CT

Where: Technological Institute, Tech L361, 2145 Sheridan Road, Evanston, IL 60208 map it

Audience: Faculty/Staff - Post Docs/Docs - Graduate Students

Contact: Department Office   (847) 491-3537

Group: Department of Materials Science and Engineering (MatSci)

Category: Lectures & Meetings

Description:

Abstract: In order to meet the requirement of low standby-power of VLSIs for the Internet-of-Things (IoT) era, development and integration of spintronics nonvolatile nano-devices are being carried out in laboratories worldwide. Spintronics nano-device is the only known nonvolatile device that is capable of being used in the place of currently volatile, and hence leaky, working memories such as DRAM and SRAM [1]. Magnetic tunnel junction (MTJ), a two-terminal nonvolatile spintronic device that can scale beyond 20 nm with perpendicular easy axis CoFeB-MgO [2, 3] is the device most commonly used for these purposes. I will review the development of such devices and its current status. I will then describe our work on three-terminal devices, which is another important entity more suitable for high speed operation; three-terminal devices utilizing current-induced domain wall motion show favorable features [4], here I focus on those devices that utilize spin-orbit torque arising from heavy metals as well as from antiferromagnets [5-9]. If time allows, I will discuss electric-field switching of magnetization in perpendicular CoFeB-MgO MTJs [10]. Work supported in part by the FIRST Program from JSPS, ImPACT from JST, and by the R & D for Next-Generation Information Technology of MEXT

Bio: Hideo Ohno’s vision and leadership in integrating semiconductor technology with spin-transport electronics has built the foundation for the field of spintronics and enabled advanced magnetic-based memory and logic circuits at the nanometer scale. Dr. Ohno’s research on synthesizing a new class of ferromagnetic semiconductors during the late 1980s led to new device concepts that combined spin and charge degrees of freedom and demonstrated control of ferromagnetism by electric fields. He further developed these ferromagnetic semiconductors to demonstrate electrical injection of spin-polarized circuits in ferromagnetic heterostructures (1999), control of ferromagnetic phase transition using electric fields (2000), and electric control of magnetization direction (2008). Dr. Ohno also developed a nonvolatile magnetic tunnel junction (MTJ) that demonstrated a world-record tunnel magnetoresistance of over 600%. In 2010, he developed a perpendicular anisotropy MTJ capable of integration at dimensions as small as 40 nm. An IEEE Member, Dr. Ohno is currently a professor at the Laboratory for Nanoelectronics and Spintronics within the Research Institute of Electrical Communication at Tohoku University in Sendai, Japan, where he also directs the Center for Spintronics Integrated Systems.

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